Experimental Evaluation of Oxide Current on a Low Voltage Trench Gate Power MOS Under Mechanical Bending Conditions
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 7Language: englishTyp: PDF
Authors:
Selgi, Lorenzo Maurizio; Calabretta, Michele; Sitta, Alessandro (STMicroelectronics, Italy)
Sciuto, Antonella; D’Arrigo, Giuseppe (CNR-IMM, Italy)
Abstract:
In the context of reliability of silicon Power Devices, we conducted a study on Power MOS Gate Trench devices. The stress tensor inside the device is characterized through experimental analysis and Finite Element calculation. A test bench is developed to investigate the impact of mechanical stress on the gate leakage current of examined devices.