Design and Development of High Voltage and High Current SiC MOSFET Modules
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 6Language: englishTyp: PDF
Authors:
Kang, Yuhui (Institute of Electrical Engineering Chinese Academy of Sciences, Beijing, China)
Ning, Puqi; Yuan, Tainshu (Institute of Electrical Engineering Chinese Academy of Sciences, Beijing, China & University of Chinese Academy of Sciences, Beijing, China)
Abstract:
SiC devices have become most popular semiconductors due to the promising performances under high temperature, high voltage and high frequency. In the future, SiC will bring considerable achievements to increase power density of converter systems. In this paper, 900 V~1200 V SiC modules were designed and developed for EV application.