Experimental investigation of SiC MOSFET performance using different gate driving strategies

Abstract:
Wide Band Gap (WBG) devices represent the new generation of power switching devices. Due to their unique electrical characteristics, they are considered the main candidates to replace conventional Si devices in the coming future. The main purpose of this paper is to summarize some application design considerations regarding SiC MOSFET gate drives, for robust system design. The effects of both positive and negative gate voltage levels on system efficiency are analyzed and experimental results reported. The impact of fast drain transition on gate circuits and how to mitigate their negative effects is also considered.