Comparative study of electrical characteristics between conventional and SBD-embedded MOSFETs for next generation 3.3kV SiC modules
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 5Language: englishTyp: PDF
Authors:
Murakami, Takeshi; Sadamatsu, Koji; Imaizumi, Masayuki; Suekawa, Eisuke (Power Device Works, Mitsubishi Electric Corp., Japan)
Hino, Shiro (Advanced Technology R&D Center, Mitsubishi Electric Corp., Japan)
Abstract:
Mitsubishi Electric has been developing SBD-embedded SiC-MOSFETs which allow high power SiC modules to eliminate freewheeling SBDs and to be free from bipolar-current-induced degradation. This paper investigates electrical characteristics of 3.3kV SBD-embedded SiC-MOSFETs in comparison with conventional 3.3kV SiC-MOSFETs. Main electrical characteristics, such as JDS-VDS, breakdown, and switching waveforms, have no significant difference between them. This means that technical barrier is small in use of SBD-embedded SiC-MOSFETs. The obtained results show that SBD-embedded SiC-MOSFETs are very promising for next generation high voltage SiC power modules.