Breaking the IGBT Eloss/VCEsat trade off relationship by wedding Si IGBT + SiC MOSFET

Abstract:
In this paper hybrid switches or later in the text referred as H-SW consisting either of high speed or low VCEsat Si IGBTs, connected in parallel with low current SiC MosFET, have been proposed as a novel approach to combine the best features of Silicon IGBTs and Silicon Carbide MosFET switches at the lowest possible costs. The requirements for lower losses and higher switching frequencies has led to the development of SiC devices, but their higher cost has slowed their adoption. In addition to the significant acceleration in switching speed, the SiC MosFET is able to lower the VCEsat and enables freewheeling through its body diode.