Finite Element Method Integration on Mission Profile for Silicon Carbide (SiC) MOSFET Power Module used in the EV Traction Inverter
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 6Language: englishTyp: PDF
Authors:
Manzitto, Alessandra; Giuffrida, Vittorio; Cavallaro, Daniela; Bazzano, Gaetano (STMicroelectronics, Italy)
Abstract:
This paper implements the Mission Profile (MP) for the automotive sector to investigate thermal stress on the material stack of a power module based on the 1200V Silicon Carbide (SiC) MOSFET. This MP defines a real application scenario for drive cycle data covering the main electrical specifications for traction inverters, in order to establish the performance criteria of the power module under varying electric vehicle (EV) load conditions. Fatigue analysis of the material stack is based on the study of junction temperature jump duration and amplitude. In particular, we aim to integrate a Finite Element Method (FEM) into the MP to evaluate thermo-mechanical stress and thereby assess real power module robustness.