dV/dt Control Methods for UnitedSiC SiC FETs with Internal Cascode Structure
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 7Language: englishTyp: PDF
Authors:
Li, Zhongda; Bhalla, Anup; Losee, Pete; Zhu, Ke (United Silicon Carbide, USA)
Abstract:
The dV/dt of UnitedSiC SiC FET with internal cascode structure can be effectively controlled from 45V/ns to 5V/ns using three different methods - external Cgd method, device RC-snubber method, and JFET direct-drive method. The three methods have been studied using SPICE simulations and verified with experimental measurements. The performance of all 3 methods have been compared. This study was performed on UnitedSiC 9mOmega 1200V FET in TO247-4L package, but these dV/dt control methods can also be applied to UnitedSiC FET based modules, because they can be implemented on the gate drive board that is outside of the module.