3.3kV All SiC Module with 1(exp st) Generation Trench gate SiC MOSFETs for Traction Inverters
Conference: PCIM Europe digital days 2020 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
07/07/2020 - 07/08/2020 at Deutschland
Proceedings: PCIM Europe digital days 2020
Pages: 6Language: englishTyp: PDF
Authors:
Sekino, Yusuke; Tsuji, Takashi; Shiigi, Takashi; Usui, Ryosuke; Utsumi, Makoto; Iwamoto, Susumu; Kusunoki, Yoshiyuki; Takei, Manabu; Kobayashi, Yasuyuki; Onishi, Yasuhiko; Kimura, Hiroshi (Fuji Electric Co. Ltd., Japan)
Abstract:
Recently main requirements of traction inverters are further weight reduction by downsizing and higher efficiency of power conversion systems. For this reason, enhancing the power density of power modules will be the key to success. In this paper, electrical characteristics for 3.3kV All Silicone carbide(SiC) modules with the 1st generation trench gate SiC MOSFETs and HPnC named High Power Next Core package, which are suitable for traction application, have been presented. In addition, a comparison of PWM simulation results under typical traction conditions between All SiC modules with trench gate MOSFET and Silicon(Si) modules were shown and resulted in a 66% expansion of power density for All SiC module with trench gate MOSFET.