Advantages of Using 650 V SiC MOSFETs in High-Frequency DC-DC Converters
Conference: PCIM Europe 2017 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/16/2017 - 05/18/2017 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2017
Pages: 4Language: englishTyp: PDF
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Authors:
Sorrentino, Giuseppe; Gaito, Antonino (STMicroelectronics, Italy)
Abstract:
This paper compares the electrical and thermal behavior of DC-DC boost converters when a new 650V SiC MOSFET replaces a standard silicon device as the main switch. We will see how this state-of-the-art technology raises the bar for systems by offering higher efficiency with a more sustainable, or green, impact.