Gate-Driver with Full Protection for SiC-MOSFET Modules
Conference: PCIM Asia 2016 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
06/28/2016 - 06/30/2016 at Shanghai, China
Proceedings: PCIM Asia 2016
Pages: 7Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Fink, Karsten; Volke, Andreas (Power Integrations GmbH, Germany)
Wei, Winson (Power Integrations, China)
Wiesner, Eugen; Thal, Eckhard (Mitsubishi Electric Europe B. V., Germany)
Abstract:
This paper is presenting an advanced method of full protection by the gate driver unit for a SiC-MOSFET module using its sense terminals. The presented test results are including features like an adjustable overcurrent and short-circuit detection together with a Soft Shut Down function and Active Clamping, which is reducing the occurring over-voltage spikes at turn-off actively.