Improving the Efficiency of a Class-D Audio Power Stage using Silicon Carbide Switches
Conference: PCIM Europe 2015 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/19/2015 - 05/20/2015 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2015
Pages: 8Language: englishTyp: PDF
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Authors:
Grifone Fuchs, Verena; Wegner, Carsten; Ehrhardt, Dietmar (University of Siegen, Germany)
Abstract:
Silicon carbide (SiC) transistors improve the performance of various applications in power electronics. This work investigates the impact of SiC switches on a class-D audio power stage. Measurements on efficiency are given for two silicon and two SiC based set-up under two different rail voltages. Results show that using SiC devices significantly reduces power dissipation and enlarges the maximum output power. An example is given of downsizing the heat sink for a particular output power. The benefit of replacing the silicon devices with a specific SiC device is discussed.