Low-inductive compact SiC power modules for high-frequency operation
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDF
Personal VDE Members are entitled to a 10% discount on this title
Authors:
Meisser, Michael; Blank, Thomas (Institute for Data Processing and Electronics, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany)
Hamilton, Dean; Mawby, Philip (Peater Lab, School of Engineering, Warwick University, Coventry, United Kingdom)
Abstract:
This paper encompasses the design, manufacture and electrical characterisation of full-SiC half-bridge modules suited for high-frequency operation. The modules consist of stacked AlN DCB substrates equipped with SiC MOSFETs and SiC JFETs. The parasitic inductances of the modules were minimised by the use of a press contact system instead of contact leads. The low parasitic inductances of the modules were verified by simulation and impedance spectroscopy. Modules with different configurations are compared regarding their current- and temperature-dependent static losses by means of a temperature-controlled test rig. The measured low on-resistance of the individual switches proves the high performance of the modules predicted by thermal simulations.