Influence of the charge distribution on the electrical behavior of the BIGT
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDF
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Authors:
Wigger, Daniel; Eckel, Hans-Guenter (University of Rostock, Germany)
Abstract:
The BIGT is a hybrid structure which contains a conventional IGBT (pilot-IGBT) and a reverse-conducting IGBT (RC-IGBT) [1], [2]. The distribution of the current between these devices has an important impact on the switching and on-state behavior [3], [5]. This distribution will be influenced by a number of factors like temperature and di/dt. At a high di/dt the current flows mainly in the pilot-IGBT and transition of the RC-IGBT from unipolar to bipolar operations occurs at a higher current level. As a reason of that the on-state voltage and the turn-off behavior at low and medium current level depend on the di/dt.