Integrated packaging allows for improvement in switching characteristics of silicon carbide devices
Conference: PCIM Europe 2014 - International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
05/20/2014 - 05/22/2014 at Nürnberg, Deutschland
Proceedings: PCIM Europe 2014
Pages: 8Language: englishTyp: PDF
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Authors:
Buttay, Cyril; Falahi, Khalil El; Robutel, Remi; Hascoet, Stanislavs; Allard, Bruno (Universite de Lyon, CNRS UMR5005, INSA-Lyon, Laboratoire Ampere, France)
Martin, Christian (Universite de Lyon, CNRS UMR5005, Univ. Lyon 1, Labo. Amp`ere, France,)
Johnson, Mark (University of Nottingham, UK)
Abstract:
Silicon Carbide devices can achieve very high switching speed, but that requires specific packaging solutions. In this paper, we discuss the effects of parasitic devices on the switching behaviour. Three different prototypes are then presented, offering three different packaging and integration approaches (low inductance packaging, integration of the gate drivers, integration of common-mode filtering). The consequences on the switching speed are discussed.