Ultrahigh gain-bandwidth product Ge/Si avalanche photodetector assisted by nonuniform electric field distribution
Conference: ECOC 2024 - 50th European Conference on Optical Communication
09/22/2024 - 09/26/2024 at Frankfurt, Germany
Proceedings: ITG-Fb. 317: ECOC 2024
Pages: 4Language: englishTyp: PDF
Authors:
Cao, Hengzhen; Sun, Weichao; Xiang, Yuluan; Xie, Jin; Guo, Jingshu; Dai, Daoxin
Abstract:
We demonstrated a lateral Ge/Si avalanche photodetector with a record ultrahigh gain-band-width product of 3036 GHz. A PN-type multiplication region was introduced for achieving the nonuniform electric field distribution. The device exhibits a bandwidth of 33 GHz and a gain of 92 under -24 dBm optical power.