High Gain and Output Power in Atomic-Layer-Deposited Erbium-Doped Waveguide Amplifiers
Conference: ECOC 2024 - 50th European Conference on Optical Communication
09/22/2024 - 09/26/2024 at Frankfurt, Germany
Proceedings: ITG-Fb. 317: ECOC 2024
Pages: 4Language: englishTyp: PDF
Authors:
Zhang, Hao; Zhu, Shengyun; Zhou, Xiaoyan; Zhang, Lin
Abstract:
We demonstrate erbium-doped waveguide amplifiers (EDWAs) composed of polymer and Er(exp 3+):Al2O3 films grown by atomic layer deposition (ALD). These amplifiers exhibit remarkable on-chip net gain of 18 dB and output power of 8.1 dBm, marking a significant milestone for ALD-based EDWAs for practical applications.