Plasmonic Photodetector with InGaAs Membrane on Si Waveguide using Ni-InGaAs Alloy
Conference: ECOC 2024 - 50th European Conference on Optical Communication
09/22/2024 - 09/26/2024 at Frankfurt, Germany
Proceedings: ITG-Fb. 317: ECOC 2024
Pages: 4Language: englishTyp: PDF
Authors:
Komatsu, Kentaro; Nakayama, Taketoshi; Akazawa, Tomohiro; Wakita, Yosuke; Sakumoto, Hiroya; Zhang, Chao; Miyatake, Yuto; Monfray, Stephane; Boeuf, Frederic; Tang, Rui; Toprasertpong, Kasidit; Takagi, Shinichi; Takenaka, Mitsuru
Abstract:
We demonstrate III-V/Si hybrid plasmonic waveguide photodetector with InGaAs membrane. Alloying between InGaAs and Ni enables the simple fabrication of plasmonic structure. We achieve 0.13 A/W responsivity at 1 V with 400 nA dark current, demonstrating the potential for low-voltage and high-speed InGaAs plasmonic photodetectors.