Extremely Low Noise APD with InAs/AlAs Atomic Layer Superlattice
Conference: ECOC 2024 - 50th European Conference on Optical Communication
09/22/2024 - 09/26/2024 at Frankfurt, Germany
Proceedings: ITG-Fb. 317: ECOC 2024
Pages: 4Language: englishTyp: PDF
Authors:
Takemura, Ryota; Yamaguchi, Harunaka; Tsubouchi, Daiki; Fujihara, Ryota; Niwa, Akitsugu; Ishimura, Eitaro; Nishikawa, Satoshi; Tokizaki, Shinya; Miyazaki, Yasunori
Abstract:
This paper proposes an extremely low-noise APD structure with thin-film multiplication layers suitable for optical communications, using an atomic-scale InAs/AlAs layered structure (superlattice). Ionization rate ratio as low as 0.01 and excess noise factor of 1.9 at a multiplication factor of 10 are achieved.