Double-Side Cooled 1.2kV, 300A SiC MOSFET Phase-leg Modules for 200 kW, > 100 kW/L Traction Inverters

Conference: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
03/12/2024 - 03/14/2024 at Düsseldorf, Germany

Proceedings: ETG-Fb. 173: CIPS 2024

Pages: 5Language: englishTyp: PDF

Authors:
Zhang, Zichen; Lu, Guo-Quan; Zhao, Xingchen; Dong, Dong (Center for Power Electronics Systems, the Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, USA)
Arriola, Emmanuel (Center for Power Electronics Systems, the Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, USA & Mechanical Engineering Department, De La Salle University, Manila, Philippines)
Ubando, Aristotle (Mechanical Engineering Department, De La Salle University, Manila, Philippines)
Gao, Yuan (AAU Energy, Aalborg University, Aalborg, Denmark)

Abstract:
The packaging of a double-side cooled 1.2 kV, 149 A SiC phase-leg modules has been reported in recent years for making 100 kW, 100 kW/L traction inverters. Each phase-leg module consists of two SiC MOSFETs, one per switch position. Six of the phase-leg modules are assembled into a segmented inverter configuration to meet the power and power density requirement. In this work, the layout of the phase-leg module was redesigned to include four of the SiC MOSFETs, two per switch position, with the aim of doubling the power to 200 kW and increasing the power density beyond 100 kW/L, but with only a 10.25% footprint increase. Key features of the packaging technology developed in the previous work were implemented in the current work, which include silver sintering for chip bonding and porous silver inter-posts for bonding device source pads to substrate. Parasitic extraction simulation showed that the four-chip module has a low parasitic inductance of 4.7 nH, like the two-chip module. Static characterization of the four-chip prototypes showed a low average on-resistance of 9 mOmega and a low average leakage current of 5 nA at Vds of 1.2 kV.