Adaptive Dead Time Control for GaN HEMTs Based on a Time- Discrete Extremum-Seeking System
Conference: CIPS 2024 - 13th International Conference on Integrated Power Electronics Systems
03/12/2024 - 03/14/2024 at Düsseldorf, Germany
Proceedings: ETG-Fb. 173: CIPS 2024
Pages: 6Language: englishTyp: PDF
Authors:
Fink, Tobias; Koch, Dominik; Kallfass, Ingmar (Institute of Robust Power Semiconductor Systems, University of Stuttgart, Germany)
Abstract:
Resonant switching operation of power semiconductors has become more and more critical in order to increase the efficiency of power electronics. This paper presents a robust method for dead-time adaption based on an extremum-seeking system leaving no residual error. For half-bridge topologies this system can rely solely on the parasitic capacitances and the load inductance for relievable operating points. Utilizing this method, switching losses were reduced by 26% for the test setup. Additionally losses of a GaN half-bridge are characterized based on dead-time.