Technique for Measuring the Capacitance-Voltage Characteristics of GaN and SiC Bidirectional Power Switches

Abstract:
In this work a technique for measuring the capacitance-voltage characteristics of bidirectional power switches is presented. Due to the second gate electrode one degree of freedom is added which has to be taken into account for a precise characterization. With the proposed technique which uses the advanced admittance parameters the input, output and reverse transfer capacitance of the common-source and common-drain configuration of 650 V SiC power MOSFETs and GaN HEMTs and their unipolar counterparts are measured. In addition to the measurements and the results a comparison to the via LTSpice simulated CV-curves is made. In comparison to the measured curves the simulated CRSS of the GaN common source configuration deviated with more than the factor of 10.