TiN-Si Schottky Diodes for SWIR Detection

Abstract:
Short wavelength-infrared radiation offers multiple advantages for autonomous and automated applications. The use of this wavelength range is up to today limited by the focal plane detector technology which is for most applications economically unsuited. Schottky photodetector offer a technologically easy way to create detector concepts in Si-based technology which is favourable in terms of scaling effects. Drawbacks arise from the low quantum efficiency of these devices which stems from a high reflectivity, a high loss of generated charge carriers. High dark currents limit the signal-to-noise ratio in imaging applications. To improve these devices, we investigate Si-TiN Schottky photodetectors with a pyramidal nanophotonic structure. The results reveal that the application of the photonic nanostructure helps to improve the responsivity in comparison to a planar device design.