Change in SiC MOSFET body-diode voltage drop in TO-247 packages during inverse-mode and forward-mode power cycling test
Conference: CIPS 2022 - 12th International Conference on Integrated Power Electronics Systems
03/15/2022 - 03/17/2022 at Berlin, Germany
Proceedings: ETG-Fb. 165: CIPS 2022
Pages: 6Language: englishTyp: PDF
Authors:
Singh, Bhanu Pratap; Farjah, Amin; Norrga, Staffan; Nee, Hans-Peter (KTH Royal Institute of Technology, Stockholm, Sweden)
Chaudhury, Khaled Redwan (GE Renewable Energy, Stafford, UK)
Abstract:
Body-diode voltage drop has been identified as a reliable parameter for both as a temperature-sensitive electrical pa-rameter (TSEP) to estimate the SiC MOSFET junction temperature and as a failure precursor to identify any package related degradation. However, in the inverse-mode power-cycling test (PCT), it is found that the body-diode voltage drop changes at a fixed temperature. It is known from the previous research that the increase in a body-diode voltage drop at heating current acts as a failure precursor, indicating package related degradation. However, the change in the voltage drop at a low measurement current, due to degradation, is not well investigated. This study aims to analyse how the body-diode voltage drop at low current changes in TO-247 packaged SiC MOSFETs during inverse and forward-mode PCT.