Integration of hafnium oxide - based ferroelectric data storage devices into BEoL for low-power applications

Abstract:
In recent years various emerging memory concepts are in discussion for versatile application as low power solution in edge devices or as high performance memory in novel computing architectures. Among others, ferroelectric memories based on CMOS compliant hafnium oxide are promising candidates for fulfilling the application requirements. In our paper we focus on the integration of such memory concepts in the back-end-of-line (BEoL) and discuss cell concepts as well as thermal boundary conditions in BEoL which can be addressed by choosing appropriate materials and processes. Furthermore, ferroelectric film thickness tuning as well as cycling endurance will be evaluated showing the potential for low voltage operation and good reliability. Finally, we demonstrate the transfer of the material and process studies to integrated BEoL capacitors for memory cells. As an outlook the high potential of ferroelectric hafnium oxide for application in neuromorphic computing circuits is shown.