A Fully Integrated 28 GHz Class-J Doherty Power Amplifier in 130 nm BiCMOS
Conference: SMACD / PRIME 2021 - International Conference on SMACD and 16th Conference on PRIME
07/19/2021 - 07/22/2021 at online
Proceedings: SMACD / PRIME 2021
Pages: 4Language: englishTyp: PDF
Authors:
Veni, Simone; Neviani, Andrea; Bevilacqua, Andrea (DEI, University of Padova, Italy)
Caruso, Michele; Seebacher, David (Infineon Technologies, Villach, Austria)
Abstract:
A SiGe BiCMOS Class-J Doherty power amplifier operating at 28GHz is presented. The class-J operation is chosen to maximize the efficiency of the system without degradation in terms of bandwidth. A dynamic bias circuit is used to progressively turn on the auxiliary amplifier and improve the efficiency at back-off. Supplied by a 2.1V supply, the power amplifier features a saturation power as high as 25 dBm, a peak power added efficiency equal to 25.5 %, and a gain equal to 13.6 dB. The PAE at the 6 dB power back-off (PBO) is 17.6 %.