Electrical characteristics of double-sided cooling SiC power module using Ni micro plating bonding
Conference: CIPS 2020 - 11th International Conference on Integrated Power Electronics Systems
03/24/2020 - 03/26/2020 at Berlin, Deutschland
Proceedings: ETG-Fb. 161: CIPS 2020
Pages: 6Language: englishTyp: PDF
Authors:
Itose, Tomoya; Kawagoe, Akihiro; Imakiire, Akihiro; Kozako, Masahiro; Hikita, Masayuki (Kyushu Institute of Technology, 1-1 Sensui-cho, Tobata-ku, Kitakyusyu, Fukuoka, 804-8550, Japan)
Tatsumi, Kohei; Iizuka, Tomonori; Morisako, Isamu (IPS Research Center, Waseda University, 2-7 Hibikino, Wakamatsu-ku, Kitakyushu-shi, Fukuoka, 808-0135, Japan)
Sato, Nobuaki; Shimizu, Koji; Ueda, Kazutoshi (Mitsui High-tec Inc., 2-10-1 Komine, Yahatanishi-ku, Kitakyushu-shi, 807-8588, Japan)
Sugiura, Kazuhiko; Tsuruta, Kazuhiro (DENSO CORPORATION, 500-1Minamiyama, Komenoki, Nisshin-shi, 470-0111 Aichi, Japan)
Abstract:
This paper presents development of a double-sided cooling type SiC power module using Ni micro plating bonding at the SiC chip junctions for aiming at high heat resistance for hybrid electric vehicle (HEV) application and evaluates switching characteristics of the power module. It was found that the parasitic inductance at 10 MHz and surge voltage DeltaVDS of turn off waveform is reduced to 20 % and 60 %, respectively, compared with a conventional package type SiC power module using high temperature solder bonding composed by same chips.