Effect of Al2O3 and SiO2 Abrasives on the CMP of Molybdenum using Different Polishing Parameters
Conference: ICPT 2017 - International Conference on Planarization/CMP Technology
10/11/2017 - 10/13/2017 at Leuven, Belgium
Proceedings: ICPT 2017
Pages: 6Language: englishTyp: PDF
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Authors:
Kalantzis, Panagiotis (KU Leuven, Faculty of Science, B-3001 Leuven, Belgium)
Teugels, Lieve; De Gendt, Stefan (KU Leuven, Faculty of Science, B-3001 Leuven, Belgium & Imec, Kapeldreef 75, B-3001 Leuven, Belgium)
Abstract:
In this work the behavior of Molybdenum (Mo) during chemical mechanical polishing (CMP) is examined. The material removal rates (MRR) were studied by changing not only the chemical (abrasive and oxidizer concentration, pH) but also the mechanical (downforce pressure, platen and carrier speed and polishing pad) parameters. Keywords: CMP Mo, alumina, silica, slurry, hydrogen peroxide