New Ultrafast Laser Sources and Nonlinear Devices Based on TM:II-VI Semiconductors
Conference: ECOC 2016 - 42nd European Conference on Optical Communication
09/18/2016 - 09/22/2016 at Düsseldorf, Deutschland
Proceedings: ECOC 2016
Pages: 3Language: englishTyp: PDF
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Authors:
Vasilyev, Sergey; Moskalev, Igor; Mirov, Mike; Smolski, Viktor (IPG Photonics - Mid-Infrared Lasers, 1500 1st Ave N, Birmingham, AL 35203, USA)
Mirov, Sergey (IPG Photonics - Mid-Infrared Lasers, 1500 1st Ave N, Birmingham, AL 35203, USA & Center for Optical Sensors and Spectroscopies, University of Alabama at Birmingham, 1530 3rd Ave S, Birmingham, AL 35294, USA)
Gapontsev, Valentin (IPG Photonics Corporation, 50 Old Webster Rd, Oxford, MA 01540, USA)
Abstract:
Transition-metal-doped II-VI semiconductors possess a unique blend of physical, spectroscopic, optical, and technological parameters. These materials enable high power lasers in important middle-infrared range; they are also well suited for generation and efficient nonlinear frequency conversion of ultra-short optical pulses.