Study on Packaging and Driver Integration with GaN Switches for Fast Switching
Conference: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
03/08/2016 - 03/10/2016 at Nürnberg, Deutschland
Proceedings: CIPS 2016
Pages: 6Language: englishTyp: PDF
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Authors:
Klein, Kirill; Hoene, Eckart (Fraunhofer Institute for Reliability and Microintegration IZM, Berlin, Germany)
Reiner, Richard; Quay, Ruediger (Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg, Germany)
Abstract:
This paper gives a short overview of opportunities coming with new technologies in packaging and driver integration offered by high voltage GaN power semiconductors. Understanding of the GaN features inspires to ideas for possible monolithic integrations and solutions on semiconductor level. Understanding of assembly parasitics influencing fast switching allows designing of an ideal GaN package presented in this paper and suited to generate the most benefit from the semiconductor.