Highly integrated SiC module with thick-film dielectric allows for high frequency operation
Conference: CIPS 2016 - 9th International Conference on Integrated Power Electronics Systems
03/08/2016 - 03/10/2016 at Nürnberg, Deutschland
Proceedings: CIPS 2016
Pages: 6Language: englishTyp: PDF
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Authors:
Meisser, Michael; Schmenger, Max; Bernd, Martin; Leyrer, Benjamin; Demattio, Horst; Blank, Thomas (Institute for Data Processing and Electronics, Karlsruhe Institute of Technology (KIT), Karlsruhe, Germany)
Hamilton, Dean; Mawby, Philip (School of Engineering, University of Warwick, Coventry, United Kingdom)
Abstract:
This paper encompasses the design, manufacture and static electrical characterisation of a full-SiC 1200 V half-bridge module with integrated gate drivers and DC-link capacitors. The module is based on copper thick-film (CTF) on a 850 mm2 AL2O3 substrate. At a heat-sink temperature of 80 °C, the module can carry a continuous current of 25 A. CTF supports the implementation of fine-pitch SMD components while the use of conventional Al wire bond interconnects keeps the costs low. Combined, CTF and wire bonding could represent the next generation of fast-switching power modules. Simulations revealed that by integrating a 600 nF DC-link capacitance on the substrate, the total parasitic inductance of the power loop is reduced down to 1.4 nH at 1 MHz.