Analysis of harmonic networks in Class-F and inverse Class-F RF Power Amplifiers
Conference: PRIME 2012 - 8th Conference on Ph.D. Research in Microelectronics & Electronics
06/12/2012 - 06/15/2012 at Aachen, Germany
Proceedings: PRIME 2012
Pages: 4Language: englishTyp: PDF
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Authors:
Montesinos, Ronald; Berland, Corinne; Abi Hussein, Mazen; Venard, Olivier (LaMIPS, Laboratoire commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France )
Descamps, Philippe (LaMIPS, Laboratoire commun NXP-CRISMAT UMR 6508 CNRS ENSICAEN UCBN, Caen, France)
Abstract:
This paper presents the influence of the input and output harmonics networks of class F and F -1 power amplifiers (PAs) to achieve high efficiency in microwave applications. The analysis and design of PAs are realised on Agilent ADS software. We use for this work a GaN HEMT transistor from Cree. Overall performances are evaluated using as input signal a sine and a 16QAM modulation at 900 MHz with 5.63 dB Peak-to-Average Power Ratio (PAPR). This study shows the advantages and drawbacks of even/odd harmonics in drain curves of these PA classes as well as the tradeoff linearity-efficiency.