A Compact High-Speed RTD-based Reconfigurable Logic Gate
Conference: IPRM 2011 - 23th International Conference on Indium Phosphide and Related Materials
05/22/2011 - 05/26/2011 at Berlin, Germany
Proceedings: IPRM 2011
Pages: 3Language: englishTyp: PDF
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Authors:
Lee, Jooseok; Lee, Jongwon; Yang, Kyounghoon (Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-Dong, Yuseong-Gu, Daejeon, Republic of Korea)
Abstract:
An RTD (resonant tunneling diode)-based XOR/NOR reconfigurable logic gate has been designed and fabricated for the first time by using an RTD/HBT integration technology on an InP substrate. The operation of the fabricated XOR/NOR gate was successfully confirmed up to 1.5 GHz of clock frequency. The device count used in the RTD-based XOR/NOR reconfigurable logic gate is less than half of that in the conventional CMOS-based topology.