Cover IEC TS 62607-6-16:2022
größer

IEC TS 62607-6-16:2022

Nanomanufacturing - Key control characteristics - Part 6-16: Two-dimensional materials - Carrier concentration: Field effect transistor method

Circulation Date: 2022-11
Edition: 1.0
Language: EN - english
Seitenzahl: 23 VDE Artno.: 251357

Content

IEC TS 62607:2022 establishes a standardized method to determine the key control characteristic

  • carrier concentration
for semiconducting two-dimensional materials by the
  • field effect transistor (FET) method.
For semiconducting two-dimensional materials, the carrier concentration is evaluated using a field effect transistor (FET) test by a measurement of the voltage shift obtained from transfer curve upon doping process. The FET test structure consists of three terminals of source, drain, and gate where voltage is applied to induce the transistor action. Transfer curves are obtained by measuring drain current while applying varied gate voltage and constant drain voltage with respect to the source which is grounded.